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| inchange semiconductor product specification silicon npn power transistors 2SC2535 description ? ? with to-220c package ? high collector breakdown voltage : v ceo =400v(min) ? excellent switching time : t r =1.0 | s(max.) : t f =1.0 | s(max. applications ? high speed high voltage sw itching applications ? switching regulator applications ? high speed dc-dc converter applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i b base current 1 a t a =25 ?? 1.5 p c collector dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC2535 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 500 v v cesat collector-emitter saturation voltage i c =3a; i b =0.6a 1.0 v v besat base-emitter saturation voltage i c =3a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =400v ;i e =0 100 | a i ebo emitter cut-off current v eb =6v; i c =0 1 ma h fe dc current gain i c =3a ; v ce =5v 10 switching times t r rise time 1.0 | s t stg storage time 2.5 | s t f fall time v cc =200v; i b1 =-i b2 =0.3a;r l =68 |? duty cycle ? 1% 1.0 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC2535 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC2535 |
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